650V Super-junction Power Mosfet Super-junction Power Mosfet A super-junction (SJ) power MOSFET is a type of MOSFET that uses a special charge-compensation structure of alternating N-type and P-type semiconductor regions to achieve lower on-resistance, while […]

Fast Recovery Diodes (FRDs): The High-Speed Backbone of Modern Power Electronics Diodes are among the most fundamental semiconductor components in electronics, playing a vital role in converting alternating current (AC) into direct current (DC)—a process

Performance Comparison: SiC MOSFET vs Si IGBT The benefits of the SiC material are described earlier. Let’s now explore how SiC MOSFETs stack against the Si IGBTs in terms of performance metrics from the designers

What is a Glass Passivated Bridge Rectifier and How is it Used? A glass passivated bridge rectifier is an electronic component that converts alternating current (AC) to direct current (DC) through the use of four

Si vs. SiC: Material Differences & Benefits Previously, we have seen that the MOSFETs constructed with SiC demonstrate superior performance over the conventional Si MOSFETs. Now we delve deep into understanding why this is the

Understanding Silicon IGBTs and Silicon Carbide MOSFETs Both Silicon Carbide MOSFET vs Si IGBT, are switching devices that can handle varying degrees of voltage, current and operate at specified switching frequency. However, as we have

Replacing UTC 50N06G with Topdiode’s TP50N06K MOSFET   In the dynamic world of electronics design and manufacturing, component sourcing is a constant challenge. Supply chain disruptions, cost pressures, and the need for reliable performance demand

TP80N06G — High-Performance 60 V N-Channel MOSFET, Ideal Replacement for TSM120N06LCR Product Overview The TP80N06G is a 60 V, 55 A (Ta=25 °C) N-channel enhancement MOSFET developed by Topdiode in a PDFN5×6-8L package. Key features