1200V 33A Silicon-carbide (SiC) Power MOSFET TPMW120N120C1P Topdiode (NTHL160N120SC1)
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitance
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Resistant to Latch-Up
- Halogen Free, RoHS Compliant
Topdiode 1200V 33A Silicon-carbide (SiC) Power MOSFET TPMW120N120C1P (NTHL160N120SC1)
Topdiode 33A 1200V SiC MOSFET is an ultrahigh performance power SiC MOSFET,designed for high frequency applications where high efficiency and high reliability are required. The wide band gap material allows the design of a SiC MOSFET structure with low leakage current and conduction losses.
Topdiode TPMW120N120C1P is a nice alternative offer for On Semi SIC MOSFET NTHL160N120SC1.
Topdiode 1200V 33A Silicon-carbide (SiC) Power MOSFET TPMW120N120C1P DATA
- Tab
| Topdiode PN | TPMW120N120C1P |
| Description | SIC Mos Single-N |
| Vds（50uA） | 1200V |
| ID(A)Tc=25℃ | 33A |
| VGS(V) | -5/+20 |
| max. RDon | 140mΩ |
| Ciss（pF) | 995pF |
| Coss(pF) | 68pF |
| QG(nC) | 56.6nC |
| Package | TO-247-3 |
| Cross to Brand | On Semi |
| Pin to Pin Cross P/N | NTHL160N120SC1 |
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Silicon-carbide (SiC) Power MOSFET Datasheet
Topdiode N-Channel Super Trench Mosfet used on Start-Stop system
As emissions regulations and braking standards become increasingly stringent, automatic start-stop technology is becoming increasingly common. For a car with this function, when the driver steps on the brakes, the engine will generally shut down automatically after two seconds.
The engine will stop first to stop the piston at the appropriate position; when it is started again, the engine will stop automatically through the combined action of combustion and the 12V starter. Start the startup. It achieves the goal of reducing emissions and fuel consumption by stopping for short periods of time, such as waiting for traffic lights.
Topdiode Super Trench MOSFET series 40V products can achieve low loss (optimized RDSon performance), low switching loss (excellent switching characteristics), and improve body direction recovery characteristics and system EMC. Similarly, you can also use the Normal Trench MOSFET series 40V products to obtain stronger robustness.
With advanced packaging technology, the system efficiency and power density of MOSFET devices in the power conversion process are improved, while ensuring the impact resistance during the switching process in the parent environment, achieving fast, smooth and efficient power management and motor control.
Topdiode N-Channel Super Trench Mosfet used on Start-Stop system
N-channel Trench MOSFET：VDS=40V Ron@10V（max）=1.6mΩ-2.35mΩ
N-channel SGT Gen.2 MOS & N-channel SGT Gen.1 MOS：VDS=40V Ron@10V（max）=1.3mΩ-4.0mΩ
IC：driver IC
Topdiode Silicon-carbide (SiC) Power MOSFET Applications
Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.
MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
Main features of Topdiode SiC MOSFETs include:
Very high temperature handling capability (max. TJ = 200 °C)
Very high switching frequency operation and very low switching losses.
Low on-state resistance.
Highly reliable products with high performance and robustness
Different solutions able to cover a wide range of applications
NETCOM Server
Home appliances
Photovoltaic Industrial drives
Power supply / ups Energy storage
Charging station
Rail traction
Smart Power
Grid Wind mills
HEV / BEV
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat.
Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Also Topdiode SiC MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing us as their supplier.