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IGBT

600V~1350V Insulated Gate Bipolar Transistor IGBT

Excellent forward voltage drop

Extremely short tail current

Excellent short circuit performance

Topdiode IGBT Introduction

Topdiode provides highly energy-efficient IGBT products. An ingenious trade-off is made between conduction voltage drop and switching loss, which can greatly improve system efficiency. At the same time, this series of products has good and stable short-circuit capability, excellent low electromagnetic interference characteristics, and reliable switching speed control, providing designers with sufficient guarantee in terms of system reliability.

The current new generation, the seventh-generation micro-trench field-stop technology IGBT products, uses advanced micro-trench technology to greatly increase the density of the device cell structure. It also adopts optimized carrier storage design, multi-gradient back buffer layer design and The ultra-thin drift region process technology greatly improves the device current density.

Taking 650V products as an example, the product current density can be increased to more than 550A/cm2, which can reach the same level as the performance of international technology generation products.

The device's saturation voltage drop and switching loss are greatly reduced, and the device's compromise characteristics are greatly optimized. 650V meets the mid-frequency IGBT saturation voltage drop typical value of only 1.35V.

In addition, this series of products optimizes the switching characteristics of the device by introducing a multi-gradient back buffer layer design, providing greater margin for system design. This series of products are all produced based on large-size IGBT wafer manufacturing platforms, achieving a comprehensive combination of excellent device electrical characteristics and high parameter consistency and stability.

Topdiode IGBT (Insulated Gate Bipolar Transistors)

Topdiode provide cost effective IGBTs to replace Infineon, Onsemi, AOS, and ST IGBT.

Topdiode PN Description VCE IC VCE(SAT) IC=15A Package Pin to Pin Cross Pin to Pin Cross Pin to Pin Cross
TP80TD60BT IGBT 600V 80A 1.70V TO-247 ST STGW80V60DF
TP07TD60BF IGBT 600V 7A 1.70V TO-247 ST STGF7NB60SL
TP10TD60B IGBT 600V 10A 1.70V TO-220 ST STGP10NC60HD
TP030N065WED IGBT 650V 30A 1.75V TO-247 TRINNO TGP30N60FDRS
TP040K065WED IGBT 650V 40A 1.70V TO-247 TRINNO TGAN40N60F2DS
TP060U060EQ IGBT 600V 60A 1.90V TO-247 AOS AOK60B60D1
TPS20N60T IGBT 600V 20A 1.70V TO-247 Infineon IRG4PC40UD ST STGW20H60DF On semi FGH20N60SFD
TPS40N60T IGBT 600V 40A 1.75V TO-247 Infineon IRGP4640D ST STGW40V60DF On semi FGH40N60SFD
TPGP15N65LN IGBT 650V 15A 1.65V TO-220-3 Infineon IRGB4615D AOS AOTF15B60D2
TPGW10N120LN IGBT 1200V 10A 1.85V TO-247-3 Maximum MAW10N120T1
TPGW15N120LN IGBT 1200V 15A 1.85V TO-247-3 Infineon IKW15N120H3
TPGW25N120LN IGBT 1200V 25A 1.85V TO-247-3 Infineon IKW25N120H3
TPGW40N65LN IGBT 650V 40A 1.55V TO-247-3 Infineon IKW40N65H5 AOS AOK40B65H2AL
TPGW40N120LN IGBT 1200V 40A 1.90V TO-247-3 Infineon IKW40N120H3 On semi FGH40T120SMD
TPGW50N65NS IGBT 650V 50A 1.58V TO-247-3 Infineon IKW50N65H5 On semi FGHL50T65MQDT
TPGW75N65NS IGBT 650V 75A 1.61V TO-247-3 AOS AOK75B60D1
TPGW75N65XN IGBT 650V 75A 1.70V TO-247-3 Infineon IKW75N65EH5 On semi FGH75T65UPD

Topdiode IGBT Features

Topdiode provides highly energy-efficient IGBT products. An ingenious trade-off is made between conduction voltage drop and switching loss, which can greatly improve system efficiency. At the same time, this series of products has good and stable short-circuit capability, excellent low electromagnetic interference characteristics, and reliable switching speed control, providing designers with sufficient guarantee in terms of system reliability.

The current new generation, the seventh-generation micro-trench field-stop technology IGBT products, uses advanced micro-trench technology to greatly increase the density of the device cell structure. It also adopts optimized carrier storage design, multi-gradient back buffer layer design and The ultra-thin drift region process technology greatly improves the device current density.

Taking 650V products as an example, the product current density can be increased to more than 550A/cm2, which can reach the same level as the performance of international technology generation products.

The device's saturation voltage drop and switching loss are greatly reduced, and the device's compromise characteristics are greatly optimized. 650V meets the mid-frequency IGBT saturation voltage drop typical value of only 1.35V.

In addition, this series of products optimizes the switching characteristics of the device by introducing a multi-gradient back buffer layer design, providing greater margin for system design. This series of products are all produced based on large-size IGBT wafer manufacturing platforms, achieving a comprehensive combination of excellent device electrical characteristics and high parameter consistency and stability.

IGBT-applicantion
Inverter Appliance
  • Inverter air conditioner
  • Inverter refrigerator
  • Inverter washing machine
  • Kitchen appliance
  • Environmental electric appliance
  • Industrial Converters
  • Welding converters
  • Industrial automation
  • Robotics
  • New Energy Vehicles
  • EV Charger
  • PTC heating
  • Motor drive
  • Why Should You Choose Topdiode as Your Semiconductor IC Chip Supplier?

    Topdiode is a well-established semiconductor company with a rich history in the market.We have garnered strong recommendations from numerous international EMS/OEM customers, thanks to our exceptional reliability and outstanding performance.

    In the IC and Semiconductors market, many customers have faced significant challenges with lead times when dealing with certain US and Japanese IC brands.However, with China’s increasing investment in IC CHIPS, Topdiode is able to offer an extensive range of IGBTs, drive ICs, audio ICs at more competitive prices and shorter lead times.

    Moreover, we maintain regular stocks of transistors, IGBTs, MOSFETs, drive ICs, and audio ICs as a reliable supplier of IC CHIPS.Therefore it becomes imperative for businesses to find a local Chinese supplier for their IC needs.

    Reliable Quality
    Professorial supplier with 28+ long history serving international customer. Quality approved by famous EMS/OEM
    Alternative Solution
    Pin to Pin Replacement to Infineon, TI, AOS, On-Semi, Microchip.

    Cost-effective
    Cost-effective Semiconductors IC, help our partners cost down.

    Fast Delivery
    Fast delivery with normally 4 weeks of lead-time.

    Free Samples & Trial Order
    Free samples and trial order available for potential customers.

    Stock Available
    IGBT, MOSFET, IC stock available for certain parts.Automotive grade MOSFET, IGBT also available.
    Topdiode Group Factory

    Topdiode Group Factory

    Topdiode services are designed to meet the needs of customers seeking cost savings with faster project timelines, please contact info@topdiode.com for more information.

    Why Choosing Topdiode as Your Semiconductor IC Chip Supplier?

    Topdiode is a well-established semiconductor company with a rich history in the market. We have garnered strong recommendations from numerous international EMS/OEM customers, thanks to our exceptional reliability and outstanding performance.

    In the IC and Semiconductors market, many customers have faced significant challenges with lead times when dealing with certain US and Japanese IC brands. However, with China’s increasing investment in IC CHIPS, Topdiode is able to offer an extensive range of IGBTs, drive ICs, audio ICs at more competitive prices and shorter lead times.

    Topdiode services are designed to meet the needs of customers seeking cost savings with faster project timelines, please contact info@topdiode.com for more information.

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