Topdiode IGBT Introduction
Topdiode provides highly energy-efficient IGBT products. An ingenious trade-off is made between conduction voltage drop and switching loss, which can greatly improve system efficiency. At the same time, this series of products has good and stable short-circuit capability, excellent low electromagnetic interference characteristics, and reliable switching speed control, providing designers with sufficient guarantee in terms of system reliability.
The current new generation, the seventh-generation micro-trench field-stop technology IGBT products, uses advanced micro-trench technology to greatly increase the density of the device cell structure. It also adopts optimized carrier storage design, multi-gradient back buffer layer design and The ultra-thin drift region process technology greatly improves the device current density.
Taking 650V products as an example, the product current density can be increased to more than 550A/cm2, which can reach the same level as the performance of international technology generation products.
The device's saturation voltage drop and switching loss are greatly reduced, and the device's compromise characteristics are greatly optimized. 650V meets the mid-frequency IGBT saturation voltage drop typical value of only 1.35V.
In addition, this series of products optimizes the switching characteristics of the device by introducing a multi-gradient back buffer layer design, providing greater margin for system design. This series of products are all produced based on large-size IGBT wafer manufacturing platforms, achieving a comprehensive combination of excellent device electrical characteristics and high parameter consistency and stability.
Topdiode IGBT (Insulated Gate Bipolar Transistors)
- Topdiode IGBT Cross Guide
Topdiode PN | Description | VCE | IC | VCE(SAT) IC=15A | Package | Pin to Pin Cross | Pin to Pin Cross | Pin to Pin Cross |
TP80TD60BT | IGBT | 600V | 80A | 1.70V | TO-247 | ST STGW80V60DF | ||
TP07TD60BF | IGBT | 600V | 7A | 1.70V | TO-247 | ST STGF7NB60SL | ||
TP10TD60B | IGBT | 600V | 10A | 1.70V | TO-220 | ST STGP10NC60HD | ||
TP030N065WED | IGBT | 650V | 30A | 1.75V | TO-247 | TRINNO TGP30N60FDRS | ||
TP040K065WED | IGBT | 650V | 40A | 1.70V | TO-247 | TRINNO TGAN40N60F2DS | ||
TP060U060EQ | IGBT | 600V | 60A | 1.90V | TO-247 | AOS AOK60B60D1 | ||
TPS20N60T | IGBT | 600V | 20A | 1.70V | TO-247 | Infineon IRG4PC40UD | ST STGW20H60DF | On semi FGH20N60SFD |
TPS40N60T | IGBT | 600V | 40A | 1.75V | TO-247 | Infineon IRGP4640D | ST STGW40V60DF | On semi FGH40N60SFD |
TPGP15N65LN | IGBT | 650V | 15A | 1.65V | TO-220-3 | Infineon IRGB4615D | AOS AOTF15B60D2 | |
TPGW10N120LN | IGBT | 1200V | 10A | 1.85V | TO-247-3 | Maximum MAW10N120T1 | ||
TPGW15N120LN | IGBT | 1200V | 15A | 1.85V | TO-247-3 | Infineon IKW15N120H3 | ||
TPGW25N120LN | IGBT | 1200V | 25A | 1.85V | TO-247-3 | Infineon IKW25N120H3 | ||
TPGW40N65LN | IGBT | 650V | 40A | 1.55V | TO-247-3 | Infineon IKW40N65H5 | AOS AOK40B65H2AL | |
TPGW40N120LN | IGBT | 1200V | 40A | 1.90V | TO-247-3 | Infineon IKW40N120H3 | On semi FGH40T120SMD | |
TPGW50N65NS | IGBT | 650V | 50A | 1.58V | TO-247-3 | Infineon IKW50N65H5 | On semi FGHL50T65MQDT | |
TPGW75N65NS | IGBT | 650V | 75A | 1.61V | TO-247-3 | AOS AOK75B60D1 | ||
TPGW75N65XN | IGBT | 650V | 75A | 1.70V | TO-247-3 | Infineon IKW75N65EH5 | On semi FGH75T65UPD |
Topdiode IGBT Features
Topdiode provides highly energy-efficient IGBT products. An ingenious trade-off is made between conduction voltage drop and switching loss, which can greatly improve system efficiency. At the same time, this series of products has good and stable short-circuit capability, excellent low electromagnetic interference characteristics, and reliable switching speed control, providing designers with sufficient guarantee in terms of system reliability.
The current new generation, the seventh-generation micro-trench field-stop technology IGBT products, uses advanced micro-trench technology to greatly increase the density of the device cell structure. It also adopts optimized carrier storage design, multi-gradient back buffer layer design and The ultra-thin drift region process technology greatly improves the device current density.
Taking 650V products as an example, the product current density can be increased to more than 550A/cm2, which can reach the same level as the performance of international technology generation products.
The device's saturation voltage drop and switching loss are greatly reduced, and the device's compromise characteristics are greatly optimized. 650V meets the mid-frequency IGBT saturation voltage drop typical value of only 1.35V.
In addition, this series of products optimizes the switching characteristics of the device by introducing a multi-gradient back buffer layer design, providing greater margin for system design. This series of products are all produced based on large-size IGBT wafer manufacturing platforms, achieving a comprehensive combination of excellent device electrical characteristics and high parameter consistency and stability.

Why Should You Choose Topdiode as Your Semiconductor IC Chip Supplier?
Topdiode is a well-established semiconductor company with a rich history in the market.We have garnered strong recommendations from numerous international EMS/OEM customers, thanks to our exceptional reliability and outstanding performance.
In the IC and Semiconductors market, many customers have faced significant challenges with lead times when dealing with certain US and Japanese IC brands.However, with China’s increasing investment in IC CHIPS, Topdiode is able to offer an extensive range of IGBTs, drive ICs, audio ICs at more competitive prices and shorter lead times.
Moreover, we maintain regular stocks of transistors, IGBTs, MOSFETs, drive ICs, and audio ICs as a reliable supplier of IC CHIPS.Therefore it becomes imperative for businesses to find a local Chinese supplier for their IC needs.






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Why Choosing Topdiode as Your Semiconductor IC Chip Supplier?
Topdiode is a well-established semiconductor company with a rich history in the market. We have garnered strong recommendations from numerous international EMS/OEM customers, thanks to our exceptional reliability and outstanding performance.
In the IC and Semiconductors market, many customers have faced significant challenges with lead times when dealing with certain US and Japanese IC brands. However, with China’s increasing investment in IC CHIPS, Topdiode is able to offer an extensive range of IGBTs, drive ICs, audio ICs at more competitive prices and shorter lead times.
Topdiode services are designed to meet the needs of customers seeking cost savings with faster project timelines, please contact info@topdiode.com for more information.