1200V 50A Silicon-carbide (SiC) Power MOSFET TPMW60N120C1P Topdiode (IMW120R060M1HXKSA1)
- Very low switching losses
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, Vcs(thy= 4.5V
- 0V turn-off gate voltage for easy and simple gate drive
- Fully controllable dv/dt
- Robust body diode for hard commutation
- Temperature independent turn-off switching losses
Topdiode 1200V 50A Silicon-carbide (SiC) Power MOSFET TPMW60N120C1P (IMW120R060M1HXKSA1)
TOPDIODE TPMW60N120C1P is a N-Channel SiC Trench MOSFET transistor manufactured by TOPDIODE.
The TPMW60N120C1P is available in a TO-247-3 package and is RoHS compliant.
Topdiode TPMW60N120C1P is a nice alternative offer for Infineon SIC MOSFET IMW120R060M1HXKSA1.
Topdiode 1200V 50A Silicon-carbide (SiC) Power MOSFET TPMW60N120C1P DATA
- Tab
| Topdiode PN | TPMW60N120C1P |
| Description | SIC Mos Single-N |
| Vds（50uA） | 1200V |
| ID(A)Tc=25℃ | 50A |
| VGS(V) | -5/+20 |
| max. RDon | 80mΩ |
| Ciss（pF) | 1700pF |
| Coss(pF) | 117pF |
| QG(nC) | 94.8nC |
| Package | TO-247-3 |
| Cross to Brand | Infineon |
| Pin to Pin Cross P/N | IMW120R060M1HXKSA1 |
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Silicon-carbide (SiC) Power MOSFET Datasheet
Topdiode Mosfet Used on 5G Base Station Power Supply
Topdiode Super-Junction MOSFET Gen.3 & Super Trench MOSFET series products maximize energy efficiency while maintaining reasonable power consumption, and comprehensively improve the switching characteristics and conduction characteristics of the device. Reduce overall costs through functional upgrades and process technology optimization in all key aspects of optimizing power supply.
Currently, for applications such as full-bridge, half-bridge, LLC resonant switches, Super-Junction MOSFET has launched a 650V TF series with optimized body diode characteristics, allowing it to have better EMI performance in system applications and provide greater flexibility for system design. margin. At the same time, we provide you with a variety of package appearance options including TO-263, TO-252, TO-220. TO-220F. TO-247.
PFC:
SJ-III MOSFET & SJ-III TF MOSFET & SJ-IV MOSFET & SJ-IV NF MOSFET :
VDS=650V Ron@10V（max）=41mΩ-140mΩ
LLC:
SJ-III TF MOSFET：VDS=650V Ron@10V（max）=41mΩ-140mΩ
Synchronous rectification：
N-channel SGT-II MOSFET & N-channel SGT-I MOSFET：
VDS=40V-85V Ron@10V（max）＜10mΩ PACKAGE DFN、TOLL
Topdiode Silicon-carbide (SiC) Power MOSFET Applications
Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.
MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
Main features of Topdiode SiC MOSFETs include:
Very high temperature handling capability (max. TJ = 200 °C)
Very high switching frequency operation and very low switching losses.
Low on-state resistance.
Highly reliable products with high performance and robustness
Different solutions able to cover a wide range of applications
NETCOM Server
Home appliances
Photovoltaic Industrial drives
Power supply / ups Energy storage
Charging station
Rail traction
Smart Power
Grid Wind mills
HEV / BEV
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat.
Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Also Topdiode SiC MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing us as their supplier.