700V High side & Low side MOSFET/IGBT Gate Driver IC TPG2103 Topdiode (IRS2103)
- Floating channel designed for bootstrap operation
- Fully operational to +700V
- 3.3 V, 5V and 15V logic compatible
- dV/dt noise Immunity ±50 V/nsec
- Allowable negative Vs capability = -9V
- VCC Undervoltage Lockout circuit
- Transmission characteristic
- Cross-conduction prevention logic
- Wide operating temperature range -40°C ~125°C
- RoHS compatible
Topdiode 700V High side & Low side MOSFET/IGBT Gate Driver IC TPG2103 (IRS2103)
TOPDIODE TPG2103 is a high voltage, high speed power MOSFET drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high-side configuration which operates up to 700 V.
Topdiode TPG2103 is a nice alternative offer for Infineon driver IC IRS2103.
Topdiode 700V High side & Low side MOSFET/IGBT Gate Driver IC TPG2103 DATA
- Tab
| Topdiode PN | TPG2103 |
| Description | H-bridge Drive(N+N) |
| Operating Voltage | 700V |
| Input signal | HIN,LIN |
| Deadtime | 520ns |
| Ton/Toff (ns) | 650ns/130ns |
| IO+/IO- | 300/600 |
| Package | SOIC8 |
| Cross to Brand | Infineon |
| Pin to Pin Cross P/N | IRS2103 |
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Topdiode Mosfets Drive IC used on Electric Vehicle Conventer
The electric vehicle converter can convert the high-voltage power of the electric vehicle battery into the 12V low-voltage power required by the system. Non-isolated voltage reduction solutions are usually used in electric vehicles. Since the converter works in a relatively closed environment, heat generation is crucial to the stability of the system, so there are urgent requirements for the energy efficiency of the converter. During the operation of the entire system, low wear and damage of the power unit itself is key.
TOPDIODE ordinary Trench MOSFET series and Super Trench MOSFET series maximize energy efficiency while maintaining reasonable power consumption, comprehensively improve the switching characteristics and conduction characteristics of the device, and improve the body diode reverse recovery characteristics. In particular, Super Trench technology comprehensively improves the on-resistance temperature characteristics of the product and effectively controls the increase in device on-resistance as temperature increases. Taking 100V products as an example, compared with ordinary inductive MOSFET products, Super Trench reduces the device’s on-resistance to 175% The on-resistance multiplication factor at high temperatures is reduced from the original 2.29 to 2.09, thereby significantly enhancing the device’s current capability and impact resistance at high temperatures. Super Trench MOSFET products will be more suitable for applications in high temperature and harsh environments.
Topdiode Mosfets Drive IC used on Electric Vehicle Conventer
N-channel Trench MOS：VDS=100V-120V Ron@10V（max）=16mΩ-32mΩ
N-channel SGT Gen.2 MOS&N-channel SGT Gen.1 MOS：VDS=100V-120V Ron@10V（max）=8.5mΩ-23mΩ
Topdiode Driver IC Applications
