1200V 44A Silicon-carbide (SiC) Power MOSFET TPMW80N120C1P Topdiode (NTHL080N120SC1)
- Ultra Low Gate Charge
- Low Effective Output Capacitance
- 100% UIL Tested
- This Device is Halide Free and RoHS Compliant
Topdiode 1200V 44A Silicon-carbide (SiC) Power MOSFET TPMW80N120C1P (NTHL080N120SC1)
TOPDIODE TPMW80N120C1P is a N-Channel SiC Trench MOSFET transistor manufactured by TOPDIODE.
The TPMW80N120C1P is available in a TO-247-3 package and is RoHS compliant.
Topdiode TPMW80N120C1P is a nice alternative offer for On Semi SIC MOSFET NTHL080N120SC1.
Topdiode 1200V 44A Silicon-carbide (SiC) Power MOSFET TPMW80N120C1P DATA
- Tab
| Topdiode PN | TPMW80N120C1P |
| Description | SIC Mos Single-N |
| Vds（50uA） | 1200V |
| ID(A)Tc=25℃ | 44A |
| VGS(V) | -5/+20 |
| max. RDon | 100mΩ |
| Ciss（pF) | 1590pF |
| Coss(pF) | 78.4pF |
| QG(nC) | 103nC |
| Package | TO-247-3 |
| Cross to Brand | On Semi |
| Pin to Pin Cross P/N | NTHL080N120SC1 |
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Silicon-carbide (SiC) Power MOSFET Datasheet
Topdiode P Channel Trench Mosfet used on High Intensity Discharge Lamp (HID Lamp)
Topdiode Normal Trench MOSFET series has a rich product line and features low on-resistance and extremely high robustness. For HID ballast applications, MOS with a voltage range of 30V-200V is launched, including anti-reverse connection and boost circuit; it can provide cost-effective and energy-efficient solutions.
Anti-reverse connection：
P-channel Trench MOSFET：
VDS= -30V Ron@10V（max）=3.2mΩ-8mΩ
VDS= -60V Ron@10V（max）=4mΩ-20mΩ
Boost：N-Channel Enhancement Mode Power MOSFET
VDS=80V：TP8295A\TP80H12\TP80H12D
VDS=100V：TP01H10\TP01H10D\TP01H11
VDS=200V：TP0240\TP0240F\TP0250D\TP0260\TP0260P\TP0260T
Topdiode Silicon-carbide (SiC) Power MOSFET Applications
Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.
MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
Main features of Topdiode SiC MOSFETs include:
Very high temperature handling capability (max. TJ = 200 °C)
Very high switching frequency operation and very low switching losses.
Low on-state resistance.
Highly reliable products with high performance and robustness
Different solutions able to cover a wide range of applications
NETCOM Server
Home appliances
Photovoltaic Industrial drives
Power supply / ups Energy storage
Charging station
Rail traction
Smart Power
Grid Wind mills
HEV / BEV
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat.
Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Also Topdiode SiC MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing us as their supplier.