MOSFET PDFN5X6-8L N-Channel TPG011N03G Topdiode
- 30V,180A
- RDS (ON)<1.1mΩ @ VGS=10V (TYP: 0.9mΩ)
- RDS (ON)<1.7mΩ@VGS=4.5V (TYP: 1.5mΩ)
- Split Gate Trench Technology
- Lead free product is acquired
- Excellent RDS(ON) and Low Gate Charge
MOSFET PDFN5X6-8L N-Channel TPG011N03G Topdiode
Topdiode TPG011N03G is a N-Channel Enhancement MOSFET.
It uses split gate trench technology.
These products are particularly suited for low voltage applications such as PWM applications,Load switch,power management.
Topdiode TPG011N03G is a nice alternative offer to Infineon BSC010NE2LSATMA.
MOSFET PDFN5X6-8L N-Channel TPG011N03G Topdiode DATA
- Tab
| ABSOLUTE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) | ||||||
| Parameter | Symbol | Value | Unit | |||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | Ta=25℃ | ID | 180 | A | ||
| Ta=100℃ | 120 | A | ||||
| Pulsed Drain Current | IDM | 378 | A | |||
| Single Pulsed Avalanche Energy (Tc=25℃,L=0.3mH) (2) | EAS | 160 | mJ | |||
| Drain Power Dissipation | PD | 59 | W | |||
| Thermal Resistance from Junction to Case | RθJC | 1.50 | ℃/W | |||
| Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature | TSTG | -55~ +150 | ℃ | |||
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Si MOSFET Datasheet
Topdiode MOSFET TP3134 & TP2302B Used on Bluetooth
Bluetooth headphones often incorporate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) as a key component in their power amplifier circuitry. MOSFETs enable efficient and reliable power amplification, driving the headphone speaker units to produce high-quality audio. Through precise control of voltage and current, MOSFETs ensure accurate amplification and adjustment of audio signals, enhancing the overall sound experience. Their role is crucial in optimizing power efficiency, size, and audio performance of Bluetooth headphones, making them indispensable in the design and production of wireless audio devices.
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Topdiode Si MOSFET Applications
“Si” typically refers to silicon, which is a chemical element commonly used in semiconductor technology. Silicon is widely used in electronics, including integrated circuits (ICs), transistors, diodes, and solar cells, due to its unique semiconductor properties. It is the second most abundant element in the Earth’s crust and serves as the foundation for many modern technological advancements.
A Si MOSFET, or Silicon MOSFET, is a type of transistor made from silicon. It operates by controlling the flow of current between the source and drain terminals using an electric field generated by the gate terminal. Si MOSFETs are widely used in electronics for their reliability, low cost, and compatibility with existing manufacturing processes. They are commonly found in integrated circuits (ICs) and power electronic systems, where they play a critical role in switching and amplifying signals efficiently.
Si MOSFETs offer features like high reliability, low cost, and compatibility with existing manufacturing processes. They provide efficient switching and amplification of signals in electronic devices due to their low on-resistance and fast switching speeds. Si MOSFETs are widely used in integrated circuits (ICs) and power electronic systems for their ability to handle high voltages and currents while minimizing power losses. Additionally, they exhibit excellent thermal stability and temperature performance, making them suitable for a wide range of applications in various industries.
Si MOSFET is ideally suited for space-constrained automotive, industrial, and consumer applications such as robotic vacuum cleaners, TV sets, energy meter,outdoor power supply, Bluetooth headset mobile phone air conditioner, DC-DC converters LED lighting etc.
Topdiode Si MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing Topdiode as their supplier.