MOSFET SOT-23-6L N and P-Channel TP2003-Topdiode
- N-Channel
- VDS=20V,ID=3A
- RDS(ON)<35mΩ@VGS= 4.5V
- RDS(ON)<55mΩ@VGS= 2.5V
- P-Channel
- VDS=-20V, ID=-3A
- RDS(ON)<75mΩ@VGS= -4.5V
- RDS(ON)<100mΩ@VGS= -2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- Halogen-free
MOSFET SOT-23-6L N and P-Channel TP2003-Topdiode
Topdiode TP2003 is a N and P-Channel Power MOSFET, uses advanced trench technology to provide excellent RDS(ON), and low gate charge. The complementary MOSFETs may be used to from a level shifted high side swithch,and for a host of other applications.
Topdiode TP2003 is a nice alternative offer to MCC/SIL3439KA.
MOSFET SOT-23-6L N and P-Channel TP2003-Topdiode DATA
- Tab
| ABSOLUTE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) | ||||
| Parameter | Symbol | N-Channel | P-Channel | Unit |
| Drain-Source Voltage | VDS | 20 | -20 | V |
| Gate-Source Voltage | VGS | ±12 | ±12 | V |
| Continuous Drain Current (Ta =25℃) | ID | 3 | -3 | A |
| Continuous Drain Current (Ta =70℃) | ID | 2.4 | -2.4 | A |
| Pulsed Drain Current(Note1) | IDM | 13 | -13 | A |
| Maximum Power Dissipation | PD | 0.8 | 0.8 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | -55~+150 | ℃ |
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Si MOSFET Datasheet
Topdiode MOSFET TP2003 Used on Robotic Vacuum Cleaners
The market outlook for robotic vacuum cleaners is promising, with increasing demand anticipated. As technology advances, these devices are becoming more sophisticated and affordable, driving consumer adoption. With the rise of smart home technology and the desire for convenience, robotic vacuum cleaners are expected to see continued growth in the market.
Topdiode offers various combinations of static protection TVS, low-power LDO, and low-resistance MOSFET specifically designed for robotic vacuums, which can meet the requirements of different power drive circuits.
Topdiode Recommended Products: TP2003 etc
Topdiode Si MOSFET Applications
“Si” typically refers to silicon, which is a chemical element commonly used in semiconductor technology. Silicon is widely used in electronics, including integrated circuits (ICs), transistors, diodes, and solar cells, due to its unique semiconductor properties. It is the second most abundant element in the Earth’s crust and serves as the foundation for many modern technological advancements.
A Si MOSFET, or Silicon MOSFET, is a type of transistor made from silicon. It operates by controlling the flow of current between the source and drain terminals using an electric field generated by the gate terminal. Si MOSFETs are widely used in electronics for their reliability, low cost, and compatibility with existing manufacturing processes. They are commonly found in integrated circuits (ICs) and power electronic systems, where they play a critical role in switching and amplifying signals efficiently.
Si MOSFETs offer features like high reliability, low cost, and compatibility with existing manufacturing processes. They provide efficient switching and amplification of signals in electronic devices due to their low on-resistance and fast switching speeds. Si MOSFETs are widely used in integrated circuits (ICs) and power electronic systems for their ability to handle high voltages and currents while minimizing power losses. Additionally, they exhibit excellent thermal stability and temperature performance, making them suitable for a wide range of applications in various industries.
Si MOSFET is ideally suited for space-constrained automotive, industrial, and consumer applications such as robotic vacuum cleaners, TV sets, energy meter,outdoor power supply, Bluetooth headset mobile phone air conditioner, DC-DC converters LED lighting etc.
Topdiode Si MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing Topdiode as their supplier.