MOSFET SOT23-6L N and P-Channel Power TP3003-Topdiode
- 30V, 5.8A
- RDS(ON)<26mΩ @VGS=10V TYP=18mΩ RDS(ON)<32mΩ @VGS=4.5V TYP=23mΩ
- Advanced Trench Technology
- Lead free product is acquired
MOSFET SOT23-6L N and P-Channel Power TP3003-Topdiode
Topdiode TP3003 uses advanced trench technology to provide excellent (RDS(ON)) and low gate charge. The complementary MOSFETS may be used to form a level shifted high side switch, making it ideal for high efficiency power management applications, Moreover, there are various applications, including inverters, CCFL drivers, half and full bridge topologies, backlighting, power management functions, and DC-DC converters.
Topdiode TP3003 is a nice alternative offer for Panjit #PJS6600,Diodes #DMG6601LVT-7-01
MOSFET SOT23-6L N and P-Channel Power TP3003-Topdiode DATA
- Tab
| Paramete | Symbol | Value | Unit | ||||||
| Drain-Source Voltage | VDS | 30 | V | ||||||
| Gate-Source Voltage | VGS | ±12 | V | ||||||
| Continuous Drain Current (Ta=25℃) | lD | 5.8 | A | ||||||
| Continuous Drain Current (Ta=70℃) | lD | 3.8 | A | ||||||
| Pulsed Drain Current | IDM | 23 | A | ||||||
| Power Dissipation | PD | 1.36 | W | ||||||
| Thermal Resistance from Junction to Ambient(4) | RθJA | 92 | ℃/W | ||||||
| Junction Temperature | TJ | 150 | ℃ | ||||||
| Storage Temperature | TSTG | -55~+150 | ℃ | ||||||
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Si MOSFET Datasheet
Topdiode MOSFET TP2301, TP3414, TP2310 Used on Outdoor Power Supply
Energy storage devices, such as outdoor power supply, are gradually gaining popularity in China. They are used for outdoor activities, disaster preparedness, power outages, and outdoor power supply needs. The domestic energy storage device market is still largely untapped, but it is expected to experience explosive growth in the coming years. Our company has proactively planned for this trend by developing and refining a range of discrete components tailored for the outdoor power source market. These include BMS boards, balancing circuits, and inverter circuits, for which we offer comprehensive component combinations.
Topdiode Recommended Products: TP2301\TP3414\TP2310
Topdiode Si MOSFET Applications
“Si” typically refers to silicon, which is a chemical element commonly used in semiconductor technology. Silicon is widely used in electronics, including integrated circuits (ICs), transistors, diodes, and solar cells, due to its unique semiconductor properties. It is the second most abundant element in the Earth’s crust and serves as the foundation for many modern technological advancements.
A Si MOSFET, or Silicon MOSFET, is a type of transistor made from silicon. It operates by controlling the flow of current between the source and drain terminals using an electric field generated by the gate terminal. Si MOSFETs are widely used in electronics for their reliability, low cost, and compatibility with existing manufacturing processes. They are commonly found in integrated circuits (ICs) and power electronic systems, where they play a critical role in switching and amplifying signals efficiently.
Si MOSFETs offer features like high reliability, low cost, and compatibility with existing manufacturing processes. They provide efficient switching and amplification of signals in electronic devices due to their low on-resistance and fast switching speeds. Si MOSFETs are widely used in integrated circuits (ICs) and power electronic systems for their ability to handle high voltages and currents while minimizing power losses. Additionally, they exhibit excellent thermal stability and temperature performance, making them suitable for a wide range of applications in various industries.
Si MOSFET is ideally suited for space-constrained automotive, industrial, and consumer applications such as robotic vacuum cleaners, TV sets, energy meter,outdoor power supply, Bluetooth headset mobile phone air conditioner, DC-DC converters LED lighting etc.
Topdiode Si MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing Topdiode as their supplier.