MOSFET TPC65R041WMF Super-junction Power Mosfet Topdiode
- 650V,66A
- RDS(ON)<41mΩ @ VGS=10V
- Ultra-fast body diode
- Good Reliability
- Fast switching speed
- Extremely low losses due to very Eon and Eoff
- Qualified for industrial grade applications according to JEDEC
- RoHS compliant
MOSFET TPC65R041WMF Super-junction Power Mosfet Topdiode
Topdiode TPC65R041WMF is an N-Channel power MOSFET
This MOSFET has low on-resistance and low input
capacitance, making it suitable for reducing switching and conduction losses.
It also features ultra-low gate charge (Qg), avalanche energy level (UIS),
and meets material classification standards.
Topdiode TPC65R041WMF is a nice alternative offer for VISHAY SIHG73N60E-E3
MOSFET TPC65R041WMF Super-junction Power Mosfet Topdiode DATA
- Tab
| ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) | |||
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | 650 | V |
| Gate-Source Voltage | VGS | ±30 | V |
| Continuous Drain Current (Tc =25°C) | ID | 66 | A |
| Continuous Drain Current (Tc=100°C) | ID | 42 | A |
| Pulsed Drain Current (1) | IDM | 198 | A |
| Single Pulsed Avalanche Energy(2) | EAS | 2185 | mJ |
| Power Dissipation | PD | 416 | W |
| Thermal Resistance- Junction to Ambient（3） | RθJA | 32 | °C/W |
| Thermal Resistance from Junction to Case（3） | RθJC | 0.3 | °C/W |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | TSTG | -55~ +150 | °C |
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