MOSFET TPC65R190FM Super-junction Power Mosfet Topdiode
- 650V, 20A
- RDS(ON)<190mΩ @VGS=10V
- Low FOM RDS(ON)×QG
- Better EMI
- 100% UIS and lsolation tested
- RoHs compliant
- Halogen-free
MOSFET TPC65R190FM Super-junction Power Mosfet Topdiode
SuperFET MOSFET is Topdiode’s first generation of high voltage super−junction (SJ) MOSFET family
that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power,ATX power and industrial power applications.
Topdiode TPC65R190FM is a nice alternative offer for On Semi FCPF20N60
MOSFET TPC65R190FM Super-junction Power Mosfet Topdiode DATA
- Tab
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) | |||
Parameter | Symbol | Value | Unit |
Drain-Source Voltage | VDS | 650 | V |
Gate-Source Voltage | VGS | ±30 | V |
Continuous Drain Current (Tc =25°C)(1) | ID | 20 | A |
Continuous Drain Current (Tc=100°C)(1) | 13 | A | |
Pulsed Drain Current (1)(2) | IDM | 60 | A |
Single Pulsed Avalanche Energy (3) | EAS | 390 | mJ |
Power Dissipation | PD | 26.8 | W |
MOSFET dv/dt ruggedness | dV/dT | 50 | V/ns |
Reverse diode dv/dt | 24 | V/ns | |
Thermal Resistance- Junction to Ambient(4) | RθJA | 50.6 | °C/W |
Junction Temperature | TJ | 150 | °C |
Storage Temperature | TSTG | -55~ +150 | °C |
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Topdiode offers various combinations of static protection TVS, low-power LDO, and low-resistance MOSFET specifically designed for robotic vacuums, which can meet the requirements of different power drive circuits.
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“Si” typically refers to silicon, which is a chemical element commonly used in semiconductor technology. Silicon is widely used in electronics, including integrated circuits (ICs), transistors, diodes, and solar cells, due to its unique semiconductor properties. It is the second most abundant element in the Earth’s crust and serves as the foundation for many modern technological advancements.
A Si MOSFET, or Silicon MOSFET, is a type of transistor made from silicon. It operates by controlling the flow of current between the source and drain terminals using an electric field generated by the gate terminal. Si MOSFETs are widely used in electronics for their reliability, low cost, and compatibility with existing manufacturing processes. They are commonly found in integrated circuits (ICs) and power electronic systems, where they play a critical role in switching and amplifying signals efficiently.
Si MOSFETs offer features like high reliability, low cost, and compatibility with existing manufacturing processes. They provide efficient switching and amplification of signals in electronic devices due to their low on-resistance and fast switching speeds. Si MOSFETs are widely used in integrated circuits (ICs) and power electronic systems for their ability to handle high voltages and currents while minimizing power losses. Additionally, they exhibit excellent thermal stability and temperature performance, making them suitable for a wide range of applications in various industries.
Si MOSFET is ideally suited for space-constrained automotive, industrial, and consumer applications such as robotic vacuum cleaners, TV sets, energy meter,outdoor power supply, Bluetooth headset mobile phone air conditioner, DC-DC converters LED lighting etc.
Topdiode Si MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing Topdiode as their supplier.