MOSFET TPC65R360M Super-junction Power Mosfet Topdiode
- High Density Cell Design for Extremely Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
MOSFET TPC65R360M Super-junction Power Mosfet Topdiode
Topdiode TPC65R360M is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics,rendering it suitable for the most demanding high efficiency converters.
Topdiode TPC65R360M is a nice alternative offer for ST STP13N60M2
MOSFET TPC65R360M Super-junction Power Mosfet Topdiode DATA
- Tab
| Parameter | Symbol | Value | Unit |
| N-MOSFET | |||
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (note 1) | ID | 0.17 | A |
| Pulsed Drain Current (tp=10us) | IDM | 0.68 | A |
| Continous Source-Drain Diode Current | IS | 0.17 | A |
| Power Dissipation | PD | 0.35 | W |
| Thermal Resistance from Junction to Ambient (note 1) | RθJA | 357 | ℃W |
| Junction Temperature | TJ | 150 | ℃ |
| Storage Temperature | TSTG | -55~+150 | ℃ |
| Lead Temperature for Soldering Purposes(1/8″from case for 10 s) | TL | 260 | ℃ |
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“Si” typically refers to silicon, which is a chemical element commonly used in semiconductor technology. Silicon is widely used in electronics, including integrated circuits (ICs), transistors, diodes, and solar cells, due to its unique semiconductor properties. It is the second most abundant element in the Earth’s crust and serves as the foundation for many modern technological advancements.
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