MOSFET TPG006N04D7 N-Channel Enhancement Mosfet Topdiode
- 40V,400A
- RDS(ON)<0.6mΩ ＠ VGS=10V TYP: 0.5 mΩ
- RDS(ON)<1.22mΩ ＠ VGS=4.5V TYP: 0.95mΩ
- Surface-mounted package
- Super Trench
- MSL1
- Tj max 175℃
MOSFET TPG006N04D7 N-Channel Enhancement Mosfet Topdiode
Topdiode TPG006N04D7 is a N−channel enhancement MOSFET, It is available in a TO-263-7 package.
The MOSFET’s performance characteristics, such as on-resistance vs. gate voltage and maximum drain current vs. case temperature, the TPG006N04D7 MOSFET plays a crucial role in various power applications due to its optimized design for logic level drive, ruggedness, and high current capabilities, making it suitable for a wide range of power management tasks.
Topdiode TPG006N04D7 is a nice alternative offer for Infineon IRL40SC228
MOSFET TPG006N04D7 N-Channel Enhancement Mosfet Topdiode DATA
- Tab
| ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) | |||
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | 40 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Tc =25℃)(2,3) | ID | 400 | A |
| Continuous Drain Current (Tc=100℃) (2,3) | ID | 280 | A |
| Pulsed Drain Current (1,3) | IDM | 2320 | A |
| Single Pulsed Avalanche Energy (VDD =40V, L=1.0mH) | EAS | 1568 | mJ |
| Drain Power Dissipation | PD | 330 | W |
| Thermal Resistance from Junction to Case(1) | RθJC | 0.45 | ℃/W |
| Thermal Resistance- Junction to Ambient(1) | RθJA | 32 | ℃/W |
| Junction Temperature | TJ | 175 | ℃ |
| Storage Temperature | TSTG | -55~ +175 | ℃ |
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Topdiode Si MOSFET Applications
“Si” typically refers to silicon, which is a chemical element commonly used in semiconductor technology. Silicon is widely used in electronics, including integrated circuits (ICs), transistors, diodes, and solar cells, due to its unique semiconductor properties. It is the second most abundant element in the Earth’s crust and serves as the foundation for many modern technological advancements.
A Si MOSFET, or Silicon MOSFET, is a type of transistor made from silicon. It operates by controlling the flow of current between the source and drain terminals using an electric field generated by the gate terminal. Si MOSFETs are widely used in electronics for their reliability, low cost, and compatibility with existing manufacturing processes. They are commonly found in integrated circuits (ICs) and power electronic systems, where they play a critical role in switching and amplifying signals efficiently.
Si MOSFETs offer features like high reliability, low cost, and compatibility with existing manufacturing processes. They provide efficient switching and amplification of signals in electronic devices due to their low on-resistance and fast switching speeds. Si MOSFETs are widely used in integrated circuits (ICs) and power electronic systems for their ability to handle high voltages and currents while minimizing power losses. Additionally, they exhibit excellent thermal stability and temperature performance, making them suitable for a wide range of applications in various industries.
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