Topdiode SiC MOSFET Introduction
Topdiode SiC MOSFET Silicon Carbide MOSFET solutions are the next essential step towards an energy-smart world. Topdiode SiC MOSFET technology represents the best performance, reliability, and ease of use for system designers. Silicon Carbide (SiC) power transistors open up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability. High voltage SiC MOSFET technology has also provided impressive improvements in reverse-recovery characteristics.
Topdiode SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. Topdiode MOSFETs are metal oxide semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
Topdiode Silicon-carbide (SiC) Power MOSFET
- Topdiode SiC MOSFETs Cross Guide
| Topdiode PN | Description | Vds（50uA） | ID(A)Tc=25℃ | VGS(V) | max. RDon | Ciss（pF) | Coss(pF) | QG(nC) | Package | Pin to Pin Cross | Pin to Pin Cross | Pin to Pin Cross |
| TPMW280N120C1P | SIC Mos Single-N | 1200V | 14A | -5/+20 | 330mΩ | 442pF | 22pF | 31.3nC | TO-247-3 | ROHM SCT2280KE | ||
| TPMW160N120C1P | SIC Mos Single-N | 1200V | 32A | -5/+20 | 200mΩ | 1029pF | 69pF | 55.9nC | TO-247-3 | On Semi NTHL160N120SC1 | ROHM SCT2160KE | |
| TPMW120N120C1P | SIC Mos Single-N | 1200V | 33A | -5/+20 | 140mΩ | 995pF | 68pF | 56.6nC | TO-247-3 | On Semi NTHL160N120SC1 | ||
| TPMW80N120C1P | SIC Mos Single-N | 1200V | 44A | -5/+20 | 100mΩ | 1590pF | 78.4pF | 103nC | TO-247-3 | On Semi NTHL080N120SC1 | GREE C2M0080120D | |
| TPMW60N120C1P | SIC Mos Single-N | 1200V | 53A | -5/+20 | 80mΩ | 1700pF | 117pF | 94.8nC | TO-247-3 | Infineon IMW120R060M1HXKSA1 | ROHM SCT4062KE | |
| TPMW40N120C1P | SIC Mos Single-N | 1200V | 56A | -5/+20 | 55mΩ | 3120pF | 144pF | 196nC | TO-247-3 | On Semi NTHL040N120SC1 | ||
| TPMW30N120C1P | SIC Mos Single-N | 1200V | 77A | -5/+20 | 50mΩ | 3579pF | 233pF | 190nC | TO-247 | ROHM SCT3030KL | GREE C2M0040120D | On Semi NTHL022N120M3S |
Topdiode Silicon-carbide (SiC) Power MOSFET
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Topdiode SiC MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature-independent low switching losses, and threshold-free on-state characteristics.
Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), a threshold voltage of Vth = 4V and short-circuit robustness. This is the revolution you can rely on.
All this results in a robust Silicon Carbide MOSFET technology, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy-to-use drivers. Delivering the highest-level efficiency at high switching frequencies allowing for system size reduction, power density increases, and high lifetime reliability.
Why Should You Choose Topdiode as Your Semiconductor IC Chip Supplier?
Topdiode is a well-established semiconductor company with a rich history in the market.We have garnered strong recommendations from numerous international EMS/OEM customers, thanks to our exceptional reliability and outstanding performance.
In the IC and Semiconductors market, many customers have faced significant challenges with lead times when dealing with certain US and Japanese IC brands.However, with China’s increasing investment in IC CHIPS, Topdiode is able to offer an extensive range of IGBTs, drive ICs, audio ICs at more competitive prices and shorter lead times.
Moreover, we maintain regular stocks of transistors, IGBTs, MOSFETs, drive ICs, and audio ICs as a reliable supplier of IC CHIPS.Therefore it becomes imperative for businesses to find a local Chinese supplier for their IC needs.
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Why Choosing Topdiode as Your Semiconductor IC Chip Supplier?
Topdiode is a well-established semiconductor company with a rich history in the market. We have garnered strong recommendations from numerous international EMS/OEM customers, thanks to our exceptional reliability and outstanding performance.
In the IC and Semiconductors market, many customers have faced significant challenges with lead times when dealing with certain US and Japanese IC brands. However, with China’s increasing investment in IC CHIPS, Topdiode is able to offer an extensive range of IGBTs, drive ICs, audio ICs at more competitive prices and shorter lead times.
Topdiode services are designed to meet the needs of customers seeking cost savings with faster project timelines, please contact info@topdiode.com for more information.