How N-channel IGBT works
An N-channel IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that combines the high-power handling of a bipolar transistor with the gate-controlled switching of a MOSFET. It functions as a voltage-controlled switch, turning on when a positive gate-to-emitter voltage creates a conduction path between the collector and emitter. N-channel IGBTs are widely used in power applications like motor control, UPS systems, and home appliances due to their high-efficiency, high-power switching capabilities.
How IGBT Works:
Voltage-Controlled:
Like a MOSFET, an N-channel IGBT is controlled by a voltage applied to its gate.
N-Channel Conduction:
A positive voltage, relative to the emitter, applied to the gate of an N-channel IGBT causes current to flow from the collector to the emitter.
Equivalent Circuit:
An IGBT can be understood as an equivalent circuit combining a PNP bipolar transistor and an N-channel MOSFET.
Key Characteristics
High Power Handling:Combines the high current and voltage handling of a bipolar transistor.
Gate Control:Features the easy gate control and high input impedance of a MOSFET.
Fast Switching:Offers high-speed switching characteristics for efficient operation.
Lower Conduction Losses:Known for low conduction losses, especially in high-power applications.
Common Applications :
Motor Control: Used in variable speed drives and power inverters
UPS Systems: Essential for uninterruptible power supplies
Home Appliances: Found in devices like induction cooktops for efficient power switching.
High-Power Switching: Ideal for any application requiring fast and efficient switching of high power
Topdiode provides highly energy-efficient IGBT products. An ingenious trade-off is made between conduction voltage drop and switching loss, which can greatly improve system efficiency. At the same time, this series of products has good and stable short-circuit capability, excellent low electromagnetic interference characteristics, and reliable switching speed control, providing designers with sufficient guarantee in terms of system reliability
Topdiode TP075U065FQB N-CHANNEL IGBT MAIN CHARACTERISTICS:
IC: 75A
VCE: 650V
VCE sat-TYP: 1.8V
FEATURES of TP075U065FQB N-CHANNEL IGBT
Low gate charge
Trench FS Technology
Fast switching speed
Low switching losses
VCE(sat) with positive temperature coefficient
ABSOLUTE RATINGS(Tc=25℃) of TP075U065FQB N-CHANNEL IGBT
ELECTRICAL CHARACTERISTICSofTP075U065FQB N-CHANNEL IGBT
Anti-Parallel Diode Characteristics and Maximum Ratings
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Advantages of Selecting Topdiode as your trusted semiconductor supplier.
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