Super Junction (SJ) MOSFETs are a type of power MOSFET characterized by a unique structure and outstanding performance, particularly well-suited for high-voltage applications. Compared to conventional MOSFETs, they offer significantly lower on-resistance, gate charge, and output capacitance, resulting in improved efficiency and reduced power loss.

The depletion layer spreads differently in N-layer, which determines the limit of the breakdown voltage. SJ-MOS can be designed with N-layers with lower resistivity, allowing for lower on-resistance.

D-MOS and SJ-MOS construction and electric field

SJ-MOS (we call it DTMOS) forms a columnar P layer (P-pillar layer) on a part of N-layer and alternates P-N layers.
When VDS is applied, the depletion layer spreads over N-layer, which is the drifting layer. However, the spreads differently in the common D-MOS (called π-MOS in our case) and SJ-MOS. (See the electric field intensity diagram. The electric field intensity indicates the state in the depletion layer.)
In D-MOS, the interface between P/N-layers has the highest electric field strength, and breakover (breakdown phenomena) occurs when this part exceeds the limit of the material-silicon. This is the limit of the breakdown voltage. On the other hand, SJ-MOS has uniform electric field strength in N-layers.
As a consequence, SJ-MOS can be designed with lower-resistance N-layers, allowing for lower on-resistance.

Key Features and Advantages of SJ MOSFETs

Lower On-Resistance (RDS(on)):
Thanks to their distinctive structure, SJ MOSFETs achieve lower on-resistance, allowing them to handle higher currents at lower voltages.

Reduced Gate Charge:
A lower gate charge enables faster switching speeds and reduced power consumption.

Lower Output Capacitance (Coss):
Reduced Coss leads to lower switching losses and higher overall efficiency.

Improved Efficiency:
The combined benefits of low RDS(on), gate charge, and Coss contribute to enhanced power conversion efficiency.

Smaller Chip Size:
The unique structure of SJ MOSFETs allows for smaller chip dimensions while maintaining high-voltage capability.

High-Voltage Suitability:
SJ MOSFETs are especially well-suited for high-voltage switching applications such as Power Factor Correction (PFC) converters and other high-power systems.

Reduced Thermal Dissipation:
Lower losses and smaller size help minimize heat generation, which is critical for compact devices.

Faster Switching Speeds:
Lower gate charge and output capacitance enable faster switching, making SJ MOSFETs ideal for speed-sensitive applications.

Operating Principle of Super Junction MOSFETs

Super Junction MOSFETs enhance power efficiency and reduce conduction and switching losses through a structural innovation in the N-type drift region. Unlike conventional MOSFETs, the N-type region in SJ devices is formed using vertical trenches, resulting in a more uniform electric field distribution. This uniformity allows for more efficient use of silicon area, leading to lower on-resistance and improved overall performance.

Applications

Power Factor Correction (PFC) Converters:
Due to their high voltage handling and low switching losses, SJ MOSFETs are commonly used in PFC boost converter stages.

DC-DC Converters:
Their high efficiency and fast switching capabilities make them ideal for a wide range of DC-DC conversion applications.

Power Supplies:
SJ MOSFETs are widely used in switch-mode power supplies (SMPS) thanks to their efficiency and compact size.

Motor Controllers:
Their ability to handle high currents and fast switching makes them suitable for motor drive circuits.

Automotive Applications:
SJ MOSFETs are used in various automotive systems, such as charging infrastructure and power electronics.

Industrial Applications:
They are well-suited for industrial systems requiring high efficiency and power density.

Consumer Electronics:
SJ MOSFETs are used in devices such as OLED displays and televisions, where power efficiency is critical.

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