TOPDIODE offer a series of diodes with very competitive prices. Quality can replace NXP BAP50-03.
TOPDIODE 1PS50-03WS diode Features:
- Low forward resistance
- Low capacitance
TOPDIODE 1PS50-03WS diode APPLICATIONS
General RF applications
TOPDIODE 1PS50-03WS diode Package
SC-76(SOD323)
TOPDIODE 1PS50-03WS diode Parameters
Absolute Maximum Ratings (Ta = 25℃ )
| Parameter | Symbol | Value | Unit |
| Reverse Voltage | VR | 50 | V |
| Continuous Forward Current | IF | 50 | mA |
| Total Power Dissipation (TS = 90 ℃) | Ptot | 500 | mW |
| Junction Temperature | Tj | 150 | ℃ |
| Storage Temperature Range | Tstg | – 55 to + 150 | ℃ |
Electrical Characteristics at Ta = 25℃
| Parameter | Symbol | Min. | Max. | Unit |
| Forward Voltage
at IF = 50 mA |
VF | – | 1.1 | V |
| Reverse Current
at VR = 50 V |
IR
|
– | 100
|
nA |
| Reverse Voltage
at IR = 10 µA |
VR
|
50 | –
|
V |
| Diode Capacitance
at VR = 1 V, f = 1 MHz at VR = 5 V, f = 1 MHz |
Cd –
–
|
–
– |
0.55
0.35 |
pF |
| Forward Resistance
at IF = 0.5 mA, f = 100 MHz at IF = 1 mA, f = 100 MHz at IF = 10 mA, f = 100 MHz |
rD | –
– – |
40
25 5 |
Ω |
Here you will find the cross guide for NXP BAP50-03. We can help customer cost down a lot, and lead time is 3-4 weeks. If you are interested, pls contact Carey@topdiode.com for datasheet and inquiry.
Below attached NXP BAP50-03 spec and description for you to compare.
