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Topdiode P-Channel MosfetT AP40P05 replace Vishay Si2319CDS P-Channel 40V MOSFET

A P-channel MOSFET (PMOS) is a field-effect transistor that uses holes as charge carriers and is commonly used for high-side switching or reverse battery protection.

It turns on when the gate voltage is lower than the source voltage, effectively connecting the load to the positive rail (VCC). PMOS devices are ideal for switching positive voltages in applications like power management.

Key Characteristics and Operation

Structure: Uses P-type material for the source and drain, with an N-type substrate.

Operating Principle: A negative voltage applied to the gate attracts holes to create a conductive P-channel between the source and drain

Switching Action

ON: Gate is low (relative to the source, often ground or a lower positive voltage).

OFF: Gate is high (equal to or higher than the source voltage).

Advantages: Simple high-side driving, making it ideal for controlling power supply rails.

Disadvantages: Generally higher on-resistance and slower switching speeds compared to N-channel MOSFETs, and typically more expensive.

Common Applications

  • High-Side Switching:Placed between the power supply and the load, allowing easy turning ON/OFF of power.
  • Reverse Polarity Protection:Used to prevent damage if a battery is inserted backward.
  • Load Switching:Actively managing power to peripheral devices in portable electronics.

P-Channel vs. N-Channel

While N-channel MOSFETs are more common due to better performance, P-channel devices are often preferred for simplicity in high-side applications where you want to connect/disconnect the positive supply, whereas N-channels are usually used for low-side (ground) switching.

Vishay Si2319CDS P-Channel 40 V (D-S) MOSFET,

Vishay Si2319CDS P-Channel 40 V (D-S) MOSFET,

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC

Topdiode TAP40P05 P-Channel Enhancement Mosfet can perfect replace Vishay Si2319CDS P-Channel 40 V (D-S) MOSFET,

Features

-40V,5A

RDS (ON) <85mOhm@VGs=-10V TYP: 65mOhm

Ros (on) <120mOhm@VGs=-4.5V TYP: 90 mOhm

  • Advanced Trench Technology
  • Lead free product is acquired

Topdiode TAP40P05 P-Channel Enhancement Mosfet can perfect replace Vishay Si2319CDS P-Channel 40 V (D-S) MOSFET,

ABSOLUTE MAXIMUM RATINGS (Ta=25 °C unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS (Ta=25 °C unless otherwise noted)

MOSFET ELECTRICAL CHARACTERISTICS(T a=25 °C unless otherwise noted)

MOSFET ELECTRICAL CHARACTERISTICS(T a=25 °C unless otherwise noted)

TAP40P05 P-Channel Enhancement Mosfet

Test Circuit

TAP40P05 P-Channel Enhancement Mosfet

TAP40P05

P-Channel Enhancement Mosfet

Typical Electrical and Thermal Characteristics

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