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TP80N06G — High-Performance 60 V N-Channel MOSFET, Ideal Replacement for TSM120N06LCR

Product Overview

The TP80N06G is a 60 V, 55 A (Ta=25 °C) N-channel enhancement MOSFET developed by Topdiode in a PDFN5×6-8L package. Key features include:
Drain-Source voltage (VDS) = 60 V.
Continuous Drain Current ID = 55 A (Ta = 25 °C) / 36 A (Ta = 100 °C).
On-state resistance RDS(on) < 10 mΩ @ VGS = 10 V; <14 mΩ @ VGS = 4.5 V.
Gate-Source voltage (VGS) rating: ±20 V.
Pulsed Drain Current IDM = 220 A. Single-pulse avalanche energy EAS = 81 mJ.
RoHS-compliant, advanced trench process with low gate charge.

TSM120N06LCR

Why Use TP80N06G as a Direct Replacement for TSM120N06LCR?

The common MOSFET TSM120N06LCR from Taiwan Semiconductor Corporation (TSC) is specified as 60 V/54 A with RDS(on) of ~12 mΩ @ VGS=10 V.
Here’s a comparison:
Table1. TP80N06G

Table1. TP80N06G

Table2. TSM120N06LCR

Table2. TSM120N06LCR

 

From the comparison, you can see that TP80N06G meets or exceeds the performance of TSM120N06LCR, making it a viable and robust replacement option — particularly suitable for applications where board footprint, switching efficiency and low resistance are critical.

Application & Benefits

High-efficiency switching: The low RDS(on) reduces conduction losses, while the low gate charge supports fast switching transitions.
Footprint savings: The PDFN5×6-8L package allows compact board layout — useful in power modules, DC-DC converters, LED drivers, automotive and industrial power supplies.
Thermal & reliability strength: With a junction temperature rated up to 150 °C and low RθJA (2.4 ℃/W typical) in its package, TP80N06G offers excellent thermal performance for high-current applications.

Seamless drop-in replacement: For customers using TSM120N06LCR, TP80N06G offers a direct substitution path, with matching voltage/current specs, same package outline, and enhanced on-resistance.

Ordering Information & Considerations

When replacing TSM120N06LCR with TP80N06G, please verify layout compatibility (pad pitch, pin-out) and confirm gate drive voltage aligns (TP80N06G supports gate drive at 4.5 V to 10 V as typical).
For high-speed switching applications, evaluate the switch node and gate drive to ensure the lower gate charge of TP80N06G is fully leveraged.
Stock and supply chain: Topdiode offers this product in standard reel packaging; inquire for lead-free and RoHS versions.
Always compare entire system performance including avalanche rating, SOA, and thermal management — while TP80N06G is a strong replacement candidate, system validation is recommended.

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