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  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode
  • TRIACs F08 Series 8A 800V -Topdiode

Topdiode TRIACs F08 Series 8A 800V F0810-8D

Glass Passivated Junctions
High voltage and surge capability
Low Thermal Resistance and Durability
Triggering in all four quadrants

Topdiode TRIACs F08 Series 8A 800V F0810-8D Description - Topdiode

Topdiode F0810-8D plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

Topdiode TRIACs F08 Series 8A 800V F0810-8D DATA

ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Storage junction  temperature range Tstg -40 ~ 150
Operating junction temperature range Tj -40~ 125
Repetitive peak off-state voltage (T =25℃) VDRM 600/800 V
Repetitive peak reverse voltage (T =25℃) VRRM 600/800 V
Non repetitive surge peak Off-state voltage VDSM VDRM +100 V
Non repetitive peak reverse voltage VRSM VRRM +100 V
RMS on-state current TO-220A(TC= 100℃) IT(RMS) 8 A
TO-220B(TC= 107℃)
TO-220F(TC=95℃)
TO-251(TC= 107℃)
TO-252(TC= 107℃)
TO-262(TC=90℃)
TO-263(TC=90℃)
    Non repetitive surge peak on-state current
(180° conduction angle, F=50Hz)
ITSM 80 A
I2t value for fusing (tp= 10ms) I2t 32 A2 S
   Critical rate of rise of on-state current
(I =2×IGT, tr ≤ 100 ns)
di/dt 50 A/μS
Peak gate current IGM 4 A
Average gate power dissipation PG(AV) 1 W
Thermal Resistances
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) TO-220A 2.7 ℃/W
TO-220B 1.8
TO-220F 2.9
TO-252/TO-252 2.1
TO-262/TO-263 3.0
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol Test Condition Quadrant Value Unit
05 10
IGT VD=12V Ⅰ-Ⅱ-Ⅲ MAX 5 10 mA
10 25 V
VGT ALL MAX 1.3
VGD VD=VDRM Tj=125℃ ALL MIN 0.2 V
IL IG= 1.2IGT Ⅰ-Ⅲ MAX 5 20 mA
Ⅱ-Ⅳ 10 35
IH IT=200mA MAX 5 20 mA
dV/dt VD=2/3VDRM Gate Open  Tj=125℃ MIN 15 100 V/μs
STATIC CHARACTERISTICS
Symbol Parameter Value(MAX.) Unit
VTM ITM =11A tp=380μs Tj =25℃ 1.55 V
IDRM VD=VDRM VR=VRRM Tj =25℃ 5 μA
IRRM Tj = 125℃ 1 mA

Topdiode Hot Selling Products (6)

Circuit - speed water heater

Thyristors are pivotal in instant water heaters, significantly enhancing their performance.

Precise Temperature Control, in an instant water heater, thyristors regulate the power supplied to the heating element. By precisely adjusting the electrical current, they ensure the water reaches the desired temperature quickly and accurately. For example, if you set the heater to 40°C, the thyristor monitors the temperature sensor data. If the water is too cold, it increases power to the heating element; if it’s getting too hot, it reduces the power.

Energy Efficiency, thyristors optimize energy usage. They only draw the necessary power to heat the water, preventing over – heating and energy wastage. This not only saves on electricity bills but also makes the heater more environmentally friendly. Their ability to fine – tune power based on real – time temperature needs ensures efficient operation, making them an essential component for instant water heaters.

Recommended Models:
T16 Series
T25 Series

Topdiode SCRs and Triacs Applications

Home appliances
Speed water heater
UPS
What is a Thyristor?

A thyristor is a type of semiconductor device that acts as a switch, controlling the flow of electrical current in a circuit. Thyristors are typically used for switching and controlling high voltage or current in applications where the power must be turned on or off. They are made of four layers of semiconductor material (P-N-P-N) and typically have three terminals: anode, cathode, and gate.

Difference Between SCR & TRIAC?

Silicon Carbide Schottky Barrier Diodes are semiconductor devices that consist of a metal contact on a layer of n-type Silicon Carbide (SiC) material. The metal contact forms a Schottky barrier with the SiC material, which allows the flow of current in only one direction. SiC Schottky barrier diodes offer several advantages over conventional diodes, including lower forward voltage drop, shorter reverse recovery time, higher breakdown voltage, and higher temperature operation

What is the Working Principle of SiC Schottky Barrier Diodes?

SCR (Silicon Controlled Rectifier):

    1. Structure: An SCR is a type of thyristor that has a single direction of current flow. It has four layers (P-N-P-N) and three terminals: anode, cathode, and gate.
    2. Control: It is controlled by a gate signal. Once triggered, it remains in the “on” state (conducting) until the current flowing through it drops below a certain threshold (called the “holding current”).

TRIAC (Triode for Alternating Current):

    1. Structure: A TRIAC is similar to an SCR but can conduct current in both directions, making it suitable for AC applications. It has a similar structure but with an additional set of layers.
    2. Control: Like an SCR, a TRIAC is controlled by a gate signal, but it can conduct during both halves of an AC cycle, allowing bidirectional control.
TRIACs F08 Series 8A 800V Application-Topdiode

Static relays
Heating regulation
In-duction motor starting circuits
Phase control operation in light dimmers
Motor speed controllers

What are Benefits of Thyristors?
  1. Topdiode produces TRIAC and SCR to replace tier 1 brands like ST, WeEn, Onsemi, Vishay etc.
  2. Cost down 30-60%
  3. Lead time around 3 weeks
  4. 100% guarantee quality
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