Topdiode MBR10100 is a great alternative offer for ONSEMI MBR10100G
- Guard−Ring for Stress Protection
- Low Forward Voltage
- 175℃ Operating Junction Temperature
- Epoxy Meets UL 94 V−0 @ 0.125 in
- High Surge Capacity
- Low Stored Charge Majority Carrier Conduction
- All Packages are Pb−Free
Topdiode Schottky Barrier Diode MBR10100
Topdiode MBR10100 Series is a family of high-efficiency dual Schottky barrier rectifiers designed for high-frequency switching applications. It is widely used in switch-mode power supplies (SMPS), DC/DC converters, freewheeling diode circuits, and reverse battery protection where low forward voltage drop, high efficiency, and high thermal stability are required.
Topdiode MBR10100 is a great alternative offer for ONSEMI MBR10100G.
Topdiode Schottky Barrier Diode MBR10100 DATA
- Tab
Maximum Ratings (TA=25°C)
| MBR | MBR | MBR | MBR | MBR | MBR | ||||
| 1040 | 1045 | 1060 | 10100 | 10150 | 10200 | ||||
| SYMBOL | 1040F 1040W |
1045F 1045W |
|||||||
| 1060F 1060W |
10100F 10100W |
10150F 10150W |
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| RATINGS | 10200F 10200W |
UNIT | |||||||
| 1040D | 1045D | 1060D | 10100D | 10150D | 10200D | ||||
| Maximum repetitive reverse voltage | VRRM | 40 | 45 | 60 | 100 | 150 | 200 | V | |
| Maximum RMS voltage | VRMS | 28 | 32 | 42 | 70 | 105 | 140 | V | |
| Maximum DC blocking voltage | VDC | 40 | 45 | 60 | 100 | 150 | 200 | V | |
| Maximum average forward current | IAV | 10 | A | ||||||
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load | IFSM | 125 | A | ||||||
| TO-220AC Typical thermal resistance ITO-220AC (Note 1) TO-262AC |
Rθ-JC | 2.0 4.5 2.5 |
°C/W | ||||||
| TO-263(D2 PAK) | 2.5 | ||||||||
| Operating junction temperature range | TJ | -55 to +150 | -55 to +175 | °C | |||||
| Storage temperature range | TSTG | -55 to +175 | °C | ||||||
| MBR | MBR | MBR | MBR | MBR | MBR | ||||
| SYMBOL | 1040 | 1045 | 1060 | 10100 | 10150 | 10200 | |||
| 1040F 1040W |
1045F 1045W |
1060F 1060W |
10100F 10100W |
||||||
| CHARACTERISTICS | 10150F 10150W |
10200F 10200W |
UNIT | ||||||
| 1040D | 1045D | 1060D | 10100D | 10150D | 10200D | ||||
| Maximum forward voltage at IF=10A per leg | VF | 0.65 | 0.75 | 0.85 | 0.92 | V | |||
| Maximum average reverse TJ=25°C current at rated DC blocking TJ=125°C voltage | IR | 0.10 15 |
0.01 5 |
mA | |||||
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SiC Schottky Barrier Diode Datasheet
Topdiode SiC Schottky Barrier Diode Used on UPS (Server Power Supply)
The efficient use of electrical energy has evolved from a goal to a necessity as power-hungry consumer sectors experience exponential growth. Designers are abandoning outdated silicon solution and switch to Silicon Carbide SiC to gain system-level efficiencies with smaller, lighter and better thermal performance include LED lighting , USB Charger and Home appliance.
Topdiode Recommended Products：
SiC Diode：TPDA10S65C1P
Topdiode Silicon Carbide (SiC) Schottky Diode Applications
Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.
Silicon Carbide Schottky Barrier Diodes are semiconductor devices that consist of a metal contact on a layer of n-type Silicon Carbide (SiC) material. The metal contact forms a Schottky barrier with the SiC material, which allows the flow of current in only one direction. SiC Schottky barrier diodes offer several advantages over conventional diodes, including lower forward voltage drop, shorter reverse recovery time, higher breakdown voltage, and higher temperature operation
The working principle of a Silicon Carbide (SiC) Schottky diode is based on the metal-semiconductor junction known as the Schottky barrier. When a metal (typically aluminum or platinum) is deposited on a SiC substrate, a Schottky barrier is formed between the metal and the semiconductor material. Unlike traditional P-N junction diodes, the Schottky diode does not have a depletion region, which leads to a lower forward voltage drop and faster switching speed.
In forward bias, the metal contact is connected to the positive terminal of a voltage source, while the SiC substrate is connected to the negative terminal. When a positive voltage is applied, the electrons from the metal contact are injected into the SiC substrate, resulting in a flow of current through the device. The forward voltage drop in a SiC Schottky diode is typically lower than in a traditional P-N junction diode, which leads to lower power losses and higher efficiency.
In reverse bias, the metal contact is connected to the negative terminal of a voltage source, while the SiC substrate is connected to the positive terminal. When a negative voltage is applied, the Schottky barrier width increases, and the electric field across the device increases, leading to a breakdown of the device at a certain voltage, known as the reverse breakdown voltage. The reverse breakdown voltage of SiC Schottky diodes is typically higher than in traditional P-N junction diodes, which makes them suitable for high-voltage applications.
- Switching Mode Power Supplies (SMPS)
- AC/DC power adapters
- DC/DC converters
- Reverse Connection Protection Circuit and Solar Bypass Protection
Our SiC Schottky Barrier Diodes (SBDs) increase efficiency and add superior reliability in high-voltage applications. SiC diodes exhibit higher breakdown voltage with a lower forward voltage drop and a significantly shorter reverse recover time. SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss, enabling more efficient power systems.