MOSFET TPA65R380KM Super-junction Power Mosfet Topdiode
- 650V,11A
- RDS(ON)<380mΩ ＠ VGS=10V TYP: 350mΩ
- advanced super junction technology
- extremely low on resistance
MOSFET TPA65R380KM Super-junction Power Mosfet Topdiode
TPA65R380KM Super-junction Power Mosfet with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Topdiode TPA65R380KM is a nice alternative offer for ST STD13NM60N
MOSFET TPA65R380KM Super-junction Power Mosfet Topdiode DATA
- Tab
| ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) | |||
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | 650 | V |
| Gate-Source Voltage | VGS | ±30 | V |
| Continuous Drain Current (Tc =25℃) | ID | 11 | A |
| Continuous Drain Current (Tc=100℃) | ID | 8 | A |
| Pulsed Drain Current (1) | IDM | 44 | A |
| Single Pulsed Avalanche Energy (2) mJ | EAS | 251 | mJ |
| Drain Power Dissipation | PD | 97 | W |
| Thermal Resistance from Junction to Case | RθJC | 1.3 | ℃/W |
| Thermal Resistance- Junction to Ambient | RθJA | 62.5 | ℃/W |
| Junction Temperature | TJ | 150 | ℃ |
| Storage Temperature | TSTG | -55~ +150 ℃ | ℃ |
| Maximum Lead temperature for soldering Purpose | TL | 300 | ℃ |
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