The IRLML5203TRPBF P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and

Onsemi Transistor BSS84 General Description This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to provide rugged and reliable performance

Infineon IGBT lRGP4640D International Rectifier has expanded its family of IGBTs with the introduction of the IRGP4640DPbF and IRGP4660DPbF. These devices are rugged and reliable, optimized for uninterruptible power supplies (UPS), solar induction heating, industrial

In the world of electronic components, choosing the right transistor can significantly impact the performance and efficiency of a project. When considering alternatives for the widely used Diodes/NXP BSS123, the TOPDIODE BSS123 presents itself as

Topdiode BSS84 is a nice alternative offer for On semi/Diodes MOSFET BSS84. Read more: MOSFET SOT-23 P-Channel BSS84-Topdiode TOPDIODE MOSFET SOT-23 P-Channel BSS84 Features: -60V,-170mA RDs(ON),<8.0 Ω @VGS=10V RDs ON,<10 Ω @VGS=4.5V Advanced Trench Technology

Infineon CoolMOS IPA60R190P6 CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction(SJ) principle. Topdiode Super-junction Power Mosfet TPC65R190FM serves as an excellent replacement for the Infineon CoolMOS IPA60R190P6. CoolMOS™

TOPDIODE offer a series of diodes with very competitive prices. Quality can replace NXP BAP50-03. TOPDIODE 1PS50-03WS diode Features: Low forward resistance Low capacitance   TOPDIODE 1PS50-03WS diode APPLICATIONS General RF applications   TOPDIODE 1PS50-03WS

Infineon MOSFET IRLB8314PBF   ≤40 V OptiMOS power MOSFETs may help increase system performance and efficiency. Their use can result in reduced power losses thanks to the low RDS(ON) values as well as low gate and output