Topdiode MBR20200BCT is a nice alternative offer for WeEn WN3S20200CDTJ
- High efficiencty operation and Low power loss
- Low stored charge majority carrier conduction
- High forward surge capability
- Lead free in compliance with EU RoHS
- 2011/65/EU directive
- Green molding compound as per IEC61249 Std..(Halogen Free)
Schottky Barrier Rectifiers MBR20200BCT Topdiode
Topdiode MBR20200BCT is a high-current Schottky rectifier designed for high-frequency and high-efficiency power conversion applications.
Topdiode MBR20200BCT is a nice alternative offer for WeEn WN3S20200CDTJ.
Topdiode Schottky Barrier Rectifiers MBR20200BCT DATA
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃)
| MBR | MBR | MBR | MBR | MBR | MBR | |||
| 2040CT | 2045CT | 2060CT | 20100CT | 20150CT | 20200CT | |||
| RATINGS | 2040DCT | 2045DCT | 2060DCT | 20100DCT | 20150DCT | 20200FCT 20200BCT 20200DCT |
UNIT | |
| Maximum repetitive reverse voltage | VRRM | 40 | 45 | 60 | 100 | 150 | 200 | V |
| Maximum RMS voltage | VRMS | 28 | 32 | 42 | 70 | 105 | 140 | V |
| Maximum DC blocking voltage | VDC | 40 | 45 | 60 | 100 | 150 | 200 | V |
| Maximum average per device forward current per diode |
IAV | 20 10 |
A | |||||
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load | IFSM | 220 | A | |||||
| TO-220AB Typical thermal resistance ITO-220AB (Note 1) TO-252 |
Rθ-JC | 2.5 4.5 3.5 |
°C/W | |||||
| TO-263(D2 PAK) | 2.5 | |||||||
| Operating junction temperature range | TJ | -55 to +150 | -55 to +175 | °C | ||||
| Storage temperature range | TSTG | -55 to +175 | °C | |||||
| MBR | MBR | MBR | MBR | MBR | MBR | |||
| 2040CT | 2045CT | 2060CT | 20100CT | 20150CT | 20200CT | |||
| SYMBOL | 2040FCT 2040BCT |
2045FCT 2045BCT |
2060FCT 2060BCT |
20100FCT 20100BCT |
||||
| CHARACTERISTICS | 20150FCT 20150BCT |
20200FCT 20200BCT |
UNIT | |||||
| 2040DCT | 2045DCT | 2060DCT | 20100DCT | 20150DCT | 20200DCT | |||
| Maximum forward voltage at IF=10A per leg | VF | 0.65 | 0.75 | 0.85 | 0.92 | V | ||
| Maximum average reverse TJ=25°C current at rated DC blocking TJ=125°C voltage | IR | 0.10 15 |
0.01 5 |
mA | ||||
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SiC Schottky Barrier Diode Datasheet
Topdiode SiC Schottky Barrier Diode Used on UPS (Server Power Supply)
Because of the proportional relationship between computing power and energy consumption, the data center is undoubtedly a “big energy consumer”. According to the statistics of the U.S. Department of Energy, the power consumption of data centers accounts for 2% of the national electricity consumption.
Technically, energy consumption can be reduced by 40% by upgrading the power supply systems. For example, using APS SiC MOSFET and diode in the high voltage DC power supply system can simplify the power supply structure, improve the efficiency and reduce the number of heat sinks.
The growth of global computer server farms and Internet traffic leads to the accelerated consumption of global energy production by this infrastructure. Now, it is estimated that 500,000 data centers and 32 million personal servers around the world consume 1.5% of the world’s electricity-about 300 TWh per year.
Topdiode Recommended Products：
SiC Diode：TPDA10S65C1P，TPDA15S65C1P，TPDB20A65C1P
SiC Mosfet：TPMW60N65C1P
Topdiode Silicon Carbide (SiC) Schottky Diode Applications
Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.
Silicon Carbide Schottky Barrier Diodes are semiconductor devices that consist of a metal contact on a layer of n-type Silicon Carbide (SiC) material. The metal contact forms a Schottky barrier with the SiC material, which allows the flow of current in only one direction. SiC Schottky barrier diodes offer several advantages over conventional diodes, including lower forward voltage drop, shorter reverse recovery time, higher breakdown voltage, and higher temperature operation
The working principle of a Silicon Carbide (SiC) Schottky diode is based on the metal-semiconductor junction known as the Schottky barrier. When a metal (typically aluminum or platinum) is deposited on a SiC substrate, a Schottky barrier is formed between the metal and the semiconductor material. Unlike traditional P-N junction diodes, the Schottky diode does not have a depletion region, which leads to a lower forward voltage drop and faster switching speed.
In forward bias, the metal contact is connected to the positive terminal of a voltage source, while the SiC substrate is connected to the negative terminal. When a positive voltage is applied, the electrons from the metal contact are injected into the SiC substrate, resulting in a flow of current through the device. The forward voltage drop in a SiC Schottky diode is typically lower than in a traditional P-N junction diode, which leads to lower power losses and higher efficiency.
In reverse bias, the metal contact is connected to the negative terminal of a voltage source, while the SiC substrate is connected to the positive terminal. When a negative voltage is applied, the Schottky barrier width increases, and the electric field across the device increases, leading to a breakdown of the device at a certain voltage, known as the reverse breakdown voltage. The reverse breakdown voltage of SiC Schottky diodes is typically higher than in traditional P-N junction diodes, which makes them suitable for high-voltage applications.
- Switching Mode Power Supplies (SMPS)
- AC/DC power supplies
- DC/DC converters
- Industrial power supplies
- Telecom and server power supplies
- Battery chargers
- Inverter and power conversion systems
- Freewheeling diode applications
- High-frequency rectification circuits
Our SiC Schottky Barrier Diodes (SBDs) increase efficiency and add superior reliability in high-voltage applications. SiC diodes exhibit higher breakdown voltage with a lower forward voltage drop and a significantly shorter reverse recover time. SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss, enabling more efficient power systems.